Performance Assessment of New Dual-Pocket Vertical Heterostructure Tunnel FET-Based Biosensor Considering Steric Hindrance Issue
Performance Assessment of New Dual-Pocket Vertical Heterostructure Tunnel FET-Based Biosensor Considering Steric Hindrance Issue
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DOI：
10.1109/ted.2019.2928850
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发表时间：
2019-09-01
影响因子：
3.1
通讯作者：
De, Debashis
中科院分区：
文献类型：
--
作者：
Bhattacharyya, Amit;Chanda, Manash;De, Debashis
In this paper, a new dual-pocket (DP), dielectric modulated (DM) heterostructured tunnel field-effect transistor (DM-HTFET)-based biosensor has been reported. First, the efficacy of the DP-hetero-TFET (HTFET) has been analyzed by comparing it with other existing TFET structures. Next, a comprehensive assessment of sensitivity between single-pocket (SP) and DP-DM-HTFET biosensors for pocket thickness (T-pocket), pocket length (L-pocket), pocket doping (N-pocket), work function of the gate metal, molar fraction of Ge, gate oxide layer, and gate oxide layer thickness (T-ox) was done. Hence, a nonuniform arrangement of biomolecules inside the cavity simulation has been done using ATLAS device simulation software to validate the working ability of the proposed sensor. Significant improvement in the sensitivity due to threshold voltage (ON-current) i.e., 26.78% (78.5%), 60.8% (40.4%), 56% (2.2 x 10(2)%), and 40.6% (80.68%) has been observed for the DP-DM-HTFET overSP with the variation of Tpocket, Lpocket, Npocket, and T-ox, respectively. DP-DM-HTFET-based current mirror circuit has also been demonstrated at the end. Sensitivity evaluation discloses that the DP-DM-HTFET can be a promising candidate for CMOS-based label-free biosensing applications.
