Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission
Tunability of MoO3 Thin-Film Properties Due to Annealing in Situ Monitored by Hard X-ray Photoemission
复制标题
由硬 X 射线光电发射监测的原位退火引起的 MoO3 薄膜特性的可调性
DOI：
10.1021/acsomega.9b01027
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发表时间：
2019-06-01
期刊：
影响因子：
4.1
通讯作者：
Baer, Marcus
中科院分区：
文献类型：
--
作者：
Liao, Xiaxia;Jeong, Ah Reum;Baer, Marcus
MoO 3薄膜的化学和电子结构是通过同步加速器硬X射线光电子能谱监测的，同时从室温到310 °C退火。颜色编码的2D强度图的Mo 3d和O 1 s和价带最大值（VBM）光谱显示退火引起的变化的演变。Mo 3d和O 1 s光谱的增宽表明MoO 3的还原。在中等温度（120-200 °C）下，我们发现了Mo 5+形成的光谱证据，在更高的温度（165 °C）下也发现了Mo 4+状态。这些状态可以与VBM以上的光谱强度归因于O空位诱导的间隙状态所造成的最初未被占用的Mo 4d衍生状态的部分填充。
The chemical and electronic structure of MoO3 thin films is monitored by synchrotron-based hard X-ray photoelectron spectroscopy while annealing from room temperature to 310 °C. Color-coded 2D intensity maps of the Mo 3d and O 1s and valence band maximum (VBM) spectra show the evolution of the annealing-induced changes. Broadening of the Mo 3d and O 1s spectra indicate the reduction of MoO3. At moderate temperatures (120–200 °C), we find spectral evidence for the formation of Mo5+ and at higher temperatures (>165 °C) also of Mo4+ states. These states can be related to the spectral intensity above the VBM attributed to O vacancy induced gap states caused by partial filling of initially unoccupied Mo 4d-derived states.