A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes.
A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes.
复制标题
密封真空管中 III-V 族半导体纳米晶体的乌尔曼反应。
DOI：
10.1039/b809442j
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发表时间：
2008
影响因子：
4
通讯作者：
Qing Yang
中科院分区：
文献类型：
--
作者：
Junli Wang;Qing Yang
Group III-V (13-15, III = Ga, In, and V = P, As) semiconductor nanocrystals were effectively obtained via a developed Ullmann reaction route through the reactions of preformed nanoscale metallic indium or commercial gallium with triphenylphosphine (PPh(3)) and triphenylarsine (AsPh(3)) in sealed vacuum quartz tubes under moderate conditions at 320-400 degrees C for 8-24 h. The developed synthetic strategy in sealed vacuum tubes extends the synthesis of III-V semiconductor materials, and the air-stable PPh(3) and AsPh(3) with low toxicity provide good alternative pnicogen precursors for the synthesis of III-V nanocrystals. The analysis of XRD, ED and HRTEM established the production of one-dimensional (1D) metastable wurtzite (W) InP, InAs and GaP nanostructures in the zinc blende (ZB) products. Further investigations showed that 1D W nanostructures resulted from kinetic effects under the moderate synthetic conditions employed and the steric effect of PPh(3) and AsPh(3), and that the tendency for the synthesis of III-V nanocrystals was in the orders of IIIP > IIIAs and GaV > InV on the basis of experiments and thermodynamic calculations. Meanwhile, the microstructures and growth mechanism of the III-V nanocrystals were investigated.
