Comb-drive GaN micro-mirror on a GaN-on-silicon platform
Comb-drive GaN micro-mirror on a GaN-on-silicon platform
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DOI：
10.1088/0960-1317/21/3/035012
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发表时间：
2011-03
影响因子：
2.3
通讯作者：
Yongjin Wang;Takashi Sasaki;Tong Wu;F. Hu;K. Hane
中科院分区：
文献类型：
--
作者：
Yongjin Wang;Takashi Sasaki;Tong Wu;F. Hu;K. Hane
本文报道了一种在硅基GaN平台上制作梳状驱动GaN微镜的双面工艺。首先从背面图案化硅衬底，并通过深反应离子蚀刻去除，从而得到完全悬浮的GaN板。GaN微结构，包括扭杆，可移动的梳和镜板，然后定义在一个独立的GaN板的背面对准技术和产生的快速原子束蚀刻与Cl2气体。虽然所制造的梳状驱动GaN微镜被GaN薄膜中的残余应力偏转，但它们可以在高电阻率硅衬底上工作，而无需引入任何额外的隔离层。在旋转实验中对旋光角进行了实验表征。这项工作开辟了在硅基GaN平台上生产GaN光学微机电系统（MEMS）器件的可能性。
We report here a double-sided process for the fabrication of a comb-drive GaN micro-mirror on a GaN-on-silicon platform. A silicon substrate is first patterned from the backside and removed by deep reactive ion etching, resulting in totally suspended GaN slabs. GaN microstructures including the torsion bars, movable combs and mirror plate are then defined on a freestanding GaN slab by the backside alignment technique and generated by fast atom beam etching with Cl2 gas. Although the fabricated comb-drive GaN micro-mirrors are deflected by the residual stress in GaN thin films, they can operate on a high resistivity silicon substrate without introducing any additional isolation layer. The optical rotation angles are experimentally characterized in the rotation experiments. This work opens the possibility of producing GaN optical micro-electro-mechanical-system (MEMS) devices on a GaN-on-silicon platform.