A tunnel-induced injection field-effect transistor with steep subthreshold slope and high on-off current ratio
A tunnel-induced injection field-effect transistor with steep subthreshold slope and high on-off current ratio
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DOI：
10.1063/1.3694766
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发表时间：
2012-03
影响因子：
4
通讯作者：
Zhan Zhan-Zhan;Qianqian Huang;Ru Huang;Wenzhe Jiang;Yangyuan Wang
中科院分区：
文献类型：
--
作者：
Zhan Zhan-Zhan;Qianqian Huang;Ru Huang;Wenzhe Jiang;Yangyuan Wang
本文提出并演示了一种隧道感应注入场效应晶体管（TI-FET）。与传统的隧道场效应晶体管相比，将n型漏极改为p型，并在搭接区插入n型袋层，由于插入的n型袋层产生更高的空穴势垒，可以防止漏极的空穴漏电流，从而明显减小了失态电流。在开关过程中，来自源的栅极控制的隧道电子被困在n型口袋区，同时降低了漏极的空穴势垒，这比p型金属-氧化物-半导体场效应晶体管中直接由栅极控制的空穴扩散在势垒上的速度要快得多，从而确保了非常陡的亚阈值斜率。当器件接通时，由于从漏极扩散的主导空穴电流可以增强导通电流，这比纯隧穿要高。
In this letter, a tunnel-induced injection field-effect transistor (TI-FET) is proposed and demonstrated. Compared with conventional tunneling field-effect transistor, by changing N-type drain into P-type and inserting a N-type pocket layer into the underlap region, off-state current is appreciably reduced, due to higher hole barrier induced by the inserted N-type pocket layer which can prevent hole leakage current from the drain. During the switching process, the gate controlled tunneling electrons from the source are trapped in the N-type pocket region and simultaneously decrease the hole barrier of the drain, which can increase hole injection current much more rapidly than the hole diffusing over a barrier directly controlled by a gate as in P-type metal-oxide-semiconductor field-effect transistor and thus ensure a very steep subthreshold slope. When the device is switched on, on-state current can be enhanced due to the dominant hole current diffusing from the drain, which is higher than pure tunneling...