PdRh-functionalized Porous In2O3 Films to Boost NO2 Detection at Room Temperature and Mechanistic Insights by DFT
PdRh-functionalized Porous In2O3 Films to Boost NO2 Detection at Room Temperature and Mechanistic Insights by DFT
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DOI：
10.1016/j.snb.2023.134575
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发表时间：
2023-09
期刊：
影响因子：
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通讯作者：
Qiumei Wang;Chenyu Wang;Xiao Chang;Xianghong Liu;Jun Zhang
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文献类型：
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作者：
Qiumei Wang;Chenyu Wang;Xiao Chang;Xianghong Liu;Jun Zhang
在室温（RT）下实现高和快速的响应一直是金属氧化物半导体（MOS）传感器的挑战。与单金属功能化相比，MOS的双金属修饰为高性能RT传感器提供了一条可行的途径。本文采用原子层沉积（ALD）技术在多孔In 2 O3薄膜上沉积金属存款Pd和Rh，研究其对NO2气敏特性的敏化作用。值得注意的是，Pd/Rh催化剂使In 2 O3传感器在室温下对10 ppm NO2的响应（31.2）是纯In 2 O3的响应（2.4）的13倍，这上级已报道的基于In 2 O3的传感器。同时，In 2 O3/Pd/Rh传感器具有6.6 s的响应速度和62 ppb的检测下限。密度泛函理论（DFT）计算表明，Pd/Rh催化剂显著提高了NO2和In 2 O3之间的相互作用和电荷转移.本工作将进一步推动RT传感器敏化策略的探索。
To achieve high and fast response at room temperature (RT) has long been a challenge for metal oxide semiconductors (MOS) sensors. Compared to single-metal functionalization, dual-metal modification of MOS offers a viable avenue to high-performance RT sensors. Herein, we employ atomic layer deposition (ALD) technology to deposit Pd and Rh metals on porous In2O3thin films and investigate their sensitization effects on the NO2sensing properties. Notably, the Pd/Rh catalysts enable the In2O3sensor to have a remarkable 13-fold response (31.2) to 10 ppm NO2at RT compared to that (2.4) of pure In2O3, which is superior to those reported In2O3-based sensors. Meanwhile, the In2O3/Pd/Rh sensor has a very fast response speed of 6.6 s and a low detection limit of 62 ppb. Density functional theory (DFT) calculations reveal that the Pd/Rh catalysts dramatically improve the interaction and charge transfer between NO2and In2O3. This work will further promote the exploration of RT sensor sensitization strategy.