ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition
ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition
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DOI：
10.1016/j.jcrysgro.2006.10.251
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发表时间：
2007-02-01
影响因子：
1.8
通讯作者：
Fujita, S.
中科院分区：
文献类型：
--
作者：
Lu, J. G.;Kawaharamura, T.;Fujita, S.
采用常压雾化化学气相沉积（mist-CVD）技术制备了氧化锌（ZnO）基薄膜。考虑到其简单、廉价和安全，这是在低温下大面积沉积的有前途的方法。用该系统制备了名义纯ZnO、Al掺杂的n型ZnO（ZnO：Al）和N掺杂的p型ZnO（ZnO：N）薄膜以及Zn_（1-x）Cd_xO和Zn_（1-y）Mg_yO合金薄膜。在400 ~ 500 ℃的温度范围内沉积的薄膜具有可接受的结晶度，具有（0 0 2）择优取向和均匀的表面。所有的薄膜在可见光区表现出约90%的高透射率和占主导地位的紫外光发射的光致发光光谱。当Al含量为4at%时，n型ZnO：Al薄膜的电阻率为1.08 × 10（-3）Ω cm。在较高温度下退火的ZnO：N薄膜中获得了p型导电性，电阻率为72.8 Ω cm，霍尔迁移率为2.28 cm（2）V（-1）s（-1），空穴浓度为3.76 × 10（16）cm（-3），这一点由霍尔效应测量证实。提出了一种氢辅助氮掺杂机制，以回答在ZnO中实现p型导电性。用此方法还制备了Zn_（1-x）Cd_xO和Zn_（1-y）Mg_yO三元合金薄膜。例如，通过光学吸收光谱证实，Zn_（1-x）Cd_xO（x = 0.06）的带隙能量为3.05eV，ZnO的带隙能量为3.28eV，Zn_（1-y）Mg_yO（y = 0.11）的带隙能量为3.56eV。在ZnO系统中使用喷雾CVD可以容易地实现带隙工程。(c)2006 Elsevier B. V.保留所有权利。
An atmospheric pressure mist chemical vapor deposition (mist-CVD) system has been developed to prepare zinc oxide (ZnO)-based thin films. This is a promising method for large-area deposition at low temperatures taking into account of its simplicity, inexpensiveness, and safety. Nominally pure ZnO, Al-doped n-type ZnO (ZnO:Al), and N-doped p-type ZnO (ZnO:N) thin films, as well as Zn1-xCdxO and Zn1-yMgyO alloy films, have been deposited by this mist-CVD system. The films deposited at the temperatures ranging from 400 to 500 degrees C were of an acceptable crystallinity with (0 0 2) preferential orientation and homogeneous surface. All the films exhibited high transmittance of about 90% in visible regions and dominant UV emission in the photoluminescence spectra. The n-type ZnO:Al films had a low resistivity of 1.08 X 10(-3) Omega cm at an optimal Al content of 4 at%. The p-type conductivity was obtained in ZnO:N films annealed at higher temperatures with a resistivity of 72.8 Omega cm, Hall mobility of 2.28cm(2)V(-1)s(-1), and hole concentration of 3.76 x 10(16)cm(-3), as confirmed by Hall-effect measurements. A hydrogen-assisted nitrogen-doping mechanism was proposed to answer for the realization of p-type conductivity in ZnO. The films of Zn1-xCdxO and Zn1-yMgyO ternary alloys were also deposited by this technique. The band gap energies, for instance, were 3.05eV for Zn1-xCdxO (x = 0.06), 3.28eV for ZnO, and 3.56eV for Zn1-yMgyO (y = 0.11), as confirmed by the optical absorption spectra. The band gap engineering could be readily realized in the ZnO system using mist-CVD. (c) 2006 Elsevier B.V. All rights reserved.