The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy
The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy
复制标题
DOI：
10.1016/j.vacuum.2003.11.006
复制
发表时间：
2004-05
期刊：
影响因子：
4
通讯作者：
Ş. Karataş;A. Türüt
中科院分区：
文献类型：
--
作者：
Ş. Karataş;A. Türüt
