Structure and morphology of aluminium-oxide films formed by thermal oxidation of aluminium
Structure and morphology of aluminium-oxide films formed by thermal oxidation of aluminium
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DOI：
10.1016/s0040-6090(02)00787-3
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发表时间：
2002-10-15
期刊：
影响因子：
2.1
通讯作者：
Mittemeijer, EJ
中科院分区：
文献类型：
--
作者：
Jeurgens, LPH;Sloof, WG;Mittemeijer, EJ
用X射线光电子能谱和高分辨电子显微镜研究了在373-773K温度范围内，在1.33×10~(-4)Pa的氧分压下，裸Al(431)衬底干热氧化生长的Al_2O_3薄膜的结构和形貌。裸Al衬底的初始氧化是通过逐层岛状生长机制进行的，涉及可移动氧物种在裸Al衬底表面的横向扩散。在低温下(小于或等于573K)，氧物种的迁移率很低，形成了相对均匀的极限厚度的无定形氧化膜。X射线光电子能谱分析证实，在这些薄膜的表面存在一种表面氧化物物种。在较高的温度下(T>；573K)，最初的无定形氧化膜厚度不太均匀，逐渐转变为结晶的伽马-Al_2O_3。在这些温度下，非晶态向伽马-Al_2O_3转变的氧化物相发生。(C)2002 Elsevier Science B.V.，保留所有权利。
The structure and morphology of thin aluminium-oxide films grown by the dry, thermal oxidation of a bare Al(4 3 1) substrate at a partial oxygen pressure of 1.33 X 10(-4) Pa in the temperature range of 373-773 K were studied using X-ray photoelectron spectroscopy and high resolution electron microscopy. The initial oxidation of the bare Al substrate proceeds by an island-by-layer growth mechanism, involving the lateral diffusion over the bare Al substrate surface of mobile oxygen species. At low temperatures (Tless than or equal to573 K), the mobility of the oxygen species is very low, and an amorphous oxide film of relatively uniform, limiting thickness develops. X-ray photoelectron spectroscopic analysis established the occurrence of a surface-oxide species at the very surface of these films. At higher temperatures (T>573 K) an initially amorphous oxide film of less uniform thickness develops that gradually transforms into crystalline gamma-Al2O3. At these temperatures an amorphous-to-gamma-Al2O3 transition oxide phase occurs. (C) 2002 Elsevier Science B.V, All rights reserved.