Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
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DOI：
10.1116/1.5003476
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发表时间：
2017-11-01
影响因子：
1.4
通讯作者：
Ekinci, Yasin
中科院分区：
文献类型：
--
作者：
Fallica, Roberto;Kazazis, Dimitrios;Ekinci, Yasin
通过深各向异性蚀刻的图案转移是用于制造纳米级器件和结构的成熟技术。为了使这种技术有效，抗蚀剂材料起着关键作用，并且必须具有高分辨率、合理的灵敏度和相对于常规硅衬底或底层膜的高蚀刻选择性。在这项工作中，评价了两种高耐蚀刻性材料的光刻性能：ZEP 520 A（Nippon Zeon Co.）和mr-PosEBR（微抗蚀剂技术有限公司）。这两种材料都是正性的，基于聚合物的，非化学放大的抗蚀剂。使用了两种曝光技术：电子束光刻（EBL）和极紫外（EUV）光刻。这些抗蚀剂最初设计用于EBL图案化，其中先前展示了亚100 nm分辨率的高质量图案化。在这项工作的范围内，作者还旨在验证其对EUV的可扩展性，以实现高分辨率和大面积图案化。为此，在EUV处采用相同的EBL工艺条件。品质因数，即，得到了透明剂量、尺寸剂量和分辨率，并对这些结果进行了系统的讨论。发现这两种材料在EUV下都非常快（清除剂量低于12 mJ/cm（2）），并且能够以25 nm半间距的分辨率分辨密集线/空间阵列。图案的质量也非常好，并且侧壁粗糙度小于6 nm。有趣的是，用于EBL的通用工艺可以直接扩展到具有极高质量和产量的EUV光刻。我们的研究结果打开了新的可能性，光刻谁希望设计新的制造方案，利用EUV制造的纳米结构的深蚀刻图案转移。由AVS出版。
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have a high resolution, reasonable sensitivity, and high etch selectivity against the conventional silicon substrate or underlayer film. In this work, the lithographic performance of two high etch resistance materials was evaluated: ZEP520A (Nippon Zeon Co.) and mr-PosEBR (micro resist technology GmbH). Both materials are positive tone, polymer-based, and nonchemically amplified resists. Two exposure techniques were used: electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography. These resists were originally designed for EBL patterning, where high quality patterning at sub-100 nm resolution was previously demonstrated. In the scope of this work, the authors also aim to validate their extendibility to EUV for high resolution and large area patterning. For this purpose, the same EBL process conditions were employed at EUV. The figures of merit, i.e., dose to clear, dose to size, and resolution, were obtained, and these results are discussed systematically. It was found that both materials are very fast at EUV (dose to clear lower than 12 mJ/cm(2)) and are capable of resolving dense lines/space arrays with a resolution of 25 nm half-pitch. The quality of patterns was also very good, and the sidewall roughness was below 6 nm. Interestingly, the general-purpose process used for EBL can be extended straightforwardly to EUV lithography with comparably high quality and yield. Our findings open new possibilities for lithographers who wish to devise novel fabrication schemes exploiting EUV for fabrication of nano-structures by deep etch pattern transfer. Published by the AVS.