Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy
Ultraviolet GaN-based nanocolumn light-emitting diodes grown on n-(111) Si substrates by rf-plasma-assisted molecular beam epitaxy
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DOI：
10.1002/pssa.200778733
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发表时间：
2008-05-01
影响因子：
2
通讯作者：
Kishino, Katsumi
中科院分区：
文献类型：
--
作者：
Sekiguchi, Hiroto;Kato, Kei;Kishino, Katsumi
本文首次报道了利用RF-MBE技术在n-(1111) Si衬底上制备GaN/AlGaN纳米柱led。在室温下观察到二极管特性清晰，导通电压为4 V，紫外发射光谱峰值波长为354nm。当p-AlxGa1-xN的At含量从8.8%增加到25.1%时，由于抑制了载流子溢出，高At含量导致FWHM比低Al含量时窄。我们测量了在直流和脉冲操作下的电致发光（EL）。由于产生的热量减少，脉冲作用下的EL综合强度是100 mA直流作用下的3倍。从直流和脉冲操作的EL峰值波长差估计热阻为40℃/W。
We report the fabrication of GaN/AlGaN nanocolumn LEDs on n-(1 11) Si substrates by RF-MBE for the first time. Clear diode characteristics with a turn-on voltage of 4 V and an ultraviolet emission spectrum with a peak wavelength of 354 nm were observed at room temperature. When the At composition of p-AlxGa1-xN was changed from 8.8% to 25.1%, the high At content led a narrowing of the FWHM compared withthat for low Al contents due to the suppression of carrier overflow. We measured the electroluminescence (EL) under dc and pulsed operations. The integrated EL intensity under the pulsed operation was 3 times as strong as that under the dc operation at 100 mA due to the reduced generation of heat. The thermal resistance was estimated to be 40 degrees C/W from the EL peak wavelength dif- ference between the dc and pulsed operations.