Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy
Characterization of GaAsSb/InAlAs quantum-well structures lattice-matched to InP grown by molecular beam epitaxy
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DOI：
10.1016/0022-0248(90)90534-r
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发表时间：
1990
影响因子：
1.8
通讯作者：
Y. Nakata;Y. Sugiyama;O. Ueda;S. Sasa;T. Fujii;E. Miyauchi
中科院分区：
文献类型：
--
作者：
Y. Nakata;Y. Sugiyama;O. Ueda;S. Sasa;T. Fujii;E. Miyauchi
