A method to reduce-small-angle scattering in Monte Carlo device analysis
A method to reduce-small-angle scattering in Monte Carlo device analysis
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DOI：
10.1109/16.766884
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发表时间：
1999-06-01
影响因子：
3.1
通讯作者：
Kosina, H
中科院分区：
文献类型：
--
作者：
Kosina, H
电离杂质散射是一个各向异性的过程，表现出高度的偏好小散射角。在半导体器件的Monte Carlo模拟中，虽然小角散射事件对载流子动量弛豫的贡献很小，但仍需处理。本文提出了一种新的方法，它能有效地减少小角散射事件的数量。在模拟中，采用了各向同性过程，它产生的动量弛豫时间与各向异性过程相同。基于玻尔兹曼方程进行了理论分析。Monte Carlo计算在一个辅助范围内的掺杂浓度，晶格温度和电场。从各向异性和各向同性散射模型的结果中没有发现系统的差异。对于给定的精度，在loa和中等掺杂浓度下，所需的散射事件和自由飞行的减少可以超过一个数量级。
Ionized-impurity scattering is an anisotropic process showing a high preference for small scattering angles. In a Monte Carlo simulation of a semiconductor device many small-angle scattering events have to be processed, although the contribution of these events to carrier momentum relaxation is small, A new method is presented which reduces the amount of small-angle scattering very effectively, In the simulation an isotropic process is used which yields the same momentum relaxation time as the anisotropic process. A theoretical analysis based on the Boltzmann equation is carried out. Monte Carlo calculations are performed over a aide range of doping concentrations, lattice temperatures and electric fields. No systematic difference is found in the results from the anisotropic and the isotropic scattering models. Fora given accuracy, the reduction of needed scattering events and free flights can be more than one order of magnitude at loa and medium doping concentrations.