Electrical switching of valley polarization in monolayer semiconductors
Electrical switching of valley polarization in monolayer semiconductors
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DOI：
10.1103/physrevmaterials.4.104005
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发表时间：
2020-10
影响因子：
3.4
通讯作者：
Lizhong Li;Shengwei Jiang;Zefang Wang;Kenji Watanabe;T. Taniguchi;J. Shan;K. Mak
中科院分区：
文献类型：
--
作者：
Lizhong Li;Shengwei Jiang;Zefang Wang;Kenji Watanabe;T. Taniguchi;J. Shan;K. Mak
二维半导体中谷极化的电开关可以实现与光子螺旋通信的快速节能光电子器件，但由于电子谷自由度不直接与电场耦合，其实现仍然具有挑战性。本文通过二维半导体与二维磁体的近距离耦合，并通过电开关二维磁体的自旋，证明了谷极化的可逆电开关。这项研究也为高速谷电子器件的发展铺平了道路。
Electrical switching of valley polarization in 2D semiconductors could enable fast and energy-efficient optoelectronics devices that communicate with photon helicity but its realization remains challenging because the electronic valley degree of freedom does not directly couple to electric fields. In this paper, by proximity coupling 2D semiconductors to 2D magnets, and by electrically switching the spins of the 2D magnet, reversible electrical switching of the valley polarization has been demonstrated. This study also paves the path for high-speed valleytronics devices.