Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
Interdiffusion in Ge rich SiGe/Ge multilayers studied by in situ diffraction
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DOI：
10.1002/pssa.200881595
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发表时间：
2009-08
期刊：
影响因子：
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通讯作者：
M. Meduňa;O. Caha;M. Keplinger;J. Stangl;G. Bauer;G. Mussler;D. Grützmacher
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文献类型：
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作者：
M. Meduňa;O. Caha;M. Keplinger;J. Stangl;G. Bauer;G. Mussler;D. Grützmacher
本文报道了在Si（001）衬底上用分子束外延方法生长的应变对称周期为24 nm的SiGe/Ge多量子阱（MQW）结构的扩散特性。在原位退火期间，使用（224）倒易晶格点周围的倒易空间映射，对平均Ge含量约为70%和90%的一系列MQW结构进行X射线衍射实验。倒易空间图是在ESRF的高温下获得的，温度约为600至800 °C。当xGe = 0.7时，可观察到相互扩散的温度范围为680至780 °C，当xGe = 0.9时，为650至720 °C。扩散参数是从记录的强度图中的周期卫星的衰变分析中获得的。
We report on the investigation of diffusion properties of SiGe/Ge multiple quantum well (MQW) structures with period of 24 nm grown strain symmetrized on relaxed SiGe buffers on Si (001) substrates by molecular beam epitaxy. During in situ annealing, X‐ray diffraction experiments were performed on series of MQW structures with average Ge contents of about 70 and 90% using reciprocal space mapping around the (224) reciprocal lattice point. The reciprocal space maps were obtained at elevated temperatures at the ESRF for temperatures from about 600 to 800 °C. The temperatures, where interdiffusion becomes observable, is in the range from 680 to 780 °C for xGe = 0.7 and from 650 to 720 °C for xGe = 0.9. The diffusion parameters were obtained from the analysis of the decay of the periodic satellites in the recorded intensity maps.