Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes
Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes
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DOI：
10.1063/1.3176440
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发表时间：
2009-07
影响因子：
4
通讯作者：
H. Long;G. Fang;Huihui Huang;X. Mo;W. Xia;Binzhong Dong;Xianquan Meng;Xingzhong Zhao
中科院分区：
文献类型：
--
作者：
H. Long;G. Fang;Huihui Huang;X. Mo;W. Xia;Binzhong Dong;Xianquan Meng;Xingzhong Zhao
采用射频磁控溅射系统在n + -GaN /蓝宝石衬底上制备了基于ZnO/NiO异质结的紫外发光二极管。在室温下，当器件具有足够的正向偏压时，ZnO的近带边发射在~ 370 nm处达到峰值，全宽度为~ 7 nm。在ZnO和NiO层之间插入一个电子阻断层i - mg1−x Zn × O (0 × 1)，使发射强度大大增强，阈值电流从~ 70 mA降至~ 23 mA。用异质结的能带图对结果进行了讨论。
Ultraviolet light-emitting diodes based on ZnO/NiO heterojunctions were fabricated on commercially available n + -GaN /sapphire substrates using a radio frequency magnetron sputtering system. Near band edge emission of ZnO peaking at ∼ 370 nm with a full-width at half maximum of ∼ 7 nm was achieved at room temperature when the devices were under sufficient forward bias. With the help of an electron blocking i -Mg 1 − x Zn x O ( 0 x 1 ) layer inserted between the ZnO and NiO layers, the emission intensity has been much enhanced and the threshold current drops down to ∼ 23 from ∼ 70 mA . The results were discussed in terms of the band diagrams of the heterojunctions.