Growth of Wide, Flat Crystals of Silicon Web
Growth of Wide, Flat Crystals of Silicon Web
复制标题
宽而扁平的硅网晶体的生长
DOI：
10.1149/1.2408230
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发表时间：
1971
影响因子：
3.9
通讯作者：
A. Bennett
中科院分区：
文献类型：
--
作者：
D. L. Barrett;E. H. Myers;D. Hamilton;A. Bennett
通过使用成形辐射沉来改变网状晶体凝固界面的温度场和热流。结果，纤维网的宽度达到 3 厘米，并且在 100 微米厚的片材中平坦到小于 2.5 微米。应用于网络形态的枝晶生长热模型的定性扩展令人满意地解释了实验观察到的结果。
The temperature field and heat flow about the solidification interface of web crystals was modified by use of shaped radiation sinks. As a result, web was grown as wide as 3 cm and flat to less than 2.5 µm in 100 µm thick sheet. A qualitative extension of thermal models in dendrite growth applied to web morphology satisfactorily explains the experimentally observed results.