Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide Structure
Widely Tunable InAs/InP Quantum-Dot External-Cavity Laser with Bent-Waveguide Structure
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弯曲波导结构宽可调InAs/InP量子点外腔激光器
DOI：
10.1166/jnn.2018.16045
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发表时间：
2015-09
影响因子：
--
通讯作者：
Zhanguo Wang
中科院分区：
文献类型：
--
作者：
Yunyun Ding;Feng Gao;Zunren Lv;Zhongkai Zhang;Tao Yang;Zhanguo Wang
报道了一种用金属有机物气相外延生长的宽调谐InAs/InP量子点外腔激光器。该增益器件采用双波导结构和高反射/高反射端面镀膜，有效地抑制了腔内激射，拓宽了调谐带宽。在1442 nm ~ 1582 nm波长范围内实现了140 nm的宽调谐范围。当注入电流为2500 mA时，最大输出功率达到20 mW。
We report a widely tunable InAs/InP quantum-dot external-cavity laser grown by metal-organic vapor phase epitaxy. The gain device is processed with a bent-waveguide structure and antireflection/highreflection facet coating, which are effective for suppressing the inner-cavity lasing and broadening the tuning bandwidth. A widely tunable range of 140 nm across the wavelength from 1442 nm to 1582 nm is achieved. The maximum output power from the EC laser reaches 20 mW at the injection current of 2500mA.