Growth and magnetic properties of epitaxial MnAs thin films grown on InP(001)
Growth and magnetic properties of epitaxial MnAs thin films grown on InP(001)
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DOI：
10.1063/1.2159098
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发表时间：
2006-01
影响因子：
4
通讯作者：
M. Yokoyama;S. Ohya;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
M. Yokoyama;S. Ohya;Masaaki Tanaka
采用分子束外延技术在半绝缘InP（001）衬底上生长了MnAs铁磁薄膜。MnAs c轴（MnAs[0001]）沿着InP[1 10]轴，并且易磁化轴是面内的，沿着MnAs[112 0]轴，其平行于InP[110]轴。InP（001）衬底上MnAs薄膜的铁磁转变温度为321 K。在InP（001）衬底上生长的MnAs薄膜的结构和磁性与在GaAs（001）衬底上生长的A型MnAs薄膜相似。在InP（001）上生长单晶铁磁层的可行性将开辟磁性功能与InP基光电子器件单片集成的可能性。
Epitaxial ferromagnetic MnAs thin films have been grown by molecular-beam epitaxy on semi-insulating InP(001) substrates. The MnAs c axis (MnAs[0001]) lies along the InP[1¯10] axis, and the easy magnetization axis is in-plane, along the MnAs[112¯0] axis, which is parallel to the InP[110] axis. The ferromagnetic transition temperature of the MnAs films on InP(001) was estimated to be 321 K. The structural and magnetic properties of MnAs thin films grown on InP(001) substrates are similar to those of type-A MnAs films grown on GaAs(001) substrates. The feasibility of growing monocrystalline ferromagnetic layers on InP(001) will open up the possibility of monolithic integration of magnetic functions with InP-based optoelectronics devices.