All-electrical manipulation of magnetization in magnetic tunnel junction via spin-orbit torque
All-electrical manipulation of magnetization in magnetic tunnel junction via spin-orbit torque
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DOI：
10.1063/5.0001758
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发表时间：
2020-04-20
影响因子：
4
通讯作者：
Han, X. F.
中科院分区：
文献类型：
--
作者：
Kong, W. J.;Wan, C. H.;Han, X. F.
除了自旋转移扭矩，自旋轨道扭矩(SOT)为基于磁隧道结(MTJ)的磁随机存取存储器(MRAM)的发展提供了另一种电学途径。利用CoFeB/Ta/CoFeb T型磁性结构作为合成自由层，实现了SOT开关的无磁场MTJ。在T型结构中，面内CoFeb层通过Ta间隔物耦合到垂直CoFeb层。隔离层不仅起到了交换耦合的作用，而且还产生了很强的SOT，从而在没有任何外加磁场的情况下，在MTJ的低阻和高阻状态之间进行了急剧的切换。这项工作为实现无场SOT-MRAM或逻辑器件提供了一条有效的途径。
Besides spin-transfer torque, spin-orbit torque (SOT) provides us with another electrical way for developing magnetic random access memory (MRAM) based on magnetic tunnel junctions (MTJs). By using a CoFeB/Ta/CoFeB T-type magnetic structure as a synthetic free layer, we have realized a magnetic-field-free MTJ switchable by SOT. In the T-type structure, an in-plane CoFeB layer is coupled to a perpendicular CoFeB layer via a Ta spacer. The spacer layer not only mediates exchange coupling but also generates strong SOT, which drives sharp switching between the low and high resistance states of the MTJ without any applied magnetic fields. This work could provide an efficient way toward realization of field-free SOT-MRAM or logic devices.