Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C
Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 °C
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25 至 450 °C 下 6H 碳化硅上高质量脉冲激光沉积氮化铝的漏电流
DOI：
10.1063/1.371329
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发表时间：
1999
影响因子：
3.2
通讯作者：
T. Venkatesan
中科院分区：
文献类型：
--
作者：
C. Scozzie;A. Lelis;F. B. McLean;R. Vispute;S. Choopun;A. Patel;R. Sharma;T. Venkatesan
研究了脉冲激光沉积在重掺杂n型6H-SiC衬底上的AlN薄膜在25 ~ 450℃的高温介电性能。据报道，在1.7 MV/cm的介质场中，电容器在25°C时的漏电流密度为10−8 A/cm2，在450°C时的漏电流密度为10−3 A/cm2。主要的高温泄漏机制为零场势垒高度为1.76 eV的肖特基发射。据报道，在450°C时介电强度超过1.7 MV/cm。
The high-temperature dielectric properties of thin-film AlN that were pulsed-laser deposited on a heavily doped n-type 6H–SiC substrate are investigated from 25 to 450 °C. Capacitor leakage current densities of low 10−8 A/cm2 at 25 °C and mid 10−3 A/cm2 at 450 °C are reported for a 1.7 MV/cm dielectric field. The primary high-temperature leakage mechanism appears to be Schottky emission with a zero-field barrier height of 1.76 eV. A dielectric strength in excess of 1.7 MV/cm at 450 °C is reported.