STUDY OF REACTION COUPLING AND INTERFACIAL KINETICS AT SEMICONDUCTOR ELECTRODES BY BAND EDGE SHIFT MEASUREMENTS
STUDY OF REACTION COUPLING AND INTERFACIAL KINETICS AT SEMICONDUCTOR ELECTRODES BY BAND EDGE SHIFT MEASUREMENTS
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DOI：
10.1016/0022-0728(91)85399-a
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发表时间：
1991-02-11
影响因子：
4.5
通讯作者：
LINCOT, D
中科院分区：
文献类型：
--
作者：
ALLONGUE, P;BLONKOWSKI, S;LINCOT, D
通过带边移（BES）测量，提出了半导体/电解质界面反应研究的新方向。它特别关注反应耦合引起的问题，即氧化还原和光腐蚀反应之间的相互依赖，例如在光阳极上。用n-GaAs光阳极与各种氧化还原溶液接触，进行了BES测定和稳定性表征。关于表面充电，表明反应并不总是平行的；表面效应（例如氧化还原物质的吸附）可能强烈影响反应方案。对于最简单的情况（平行反应），我们提出了一种通过BES测量来确定电极稳定性的方法。
Through band edge shift (BES) measurements the paper puts forward new aspects concerning the study of reactions that take place at the semiconductor/electrolyte interface. In particular it focuses on the problem raised by reaction coupling, that is the interdependence between the redox and the photocorrosion reactions at photoanodes for instance. BES determination coupled with stabilization characterization was performed with n-GaAs photoanodes in contact with various redox solutions. With respect to surface charging, it is shown that reactions do not always act in parallel; surface effects (adsorption of redox species for example) may strongly affect the reaction scheme. For the simplest case (reaction in parallel) we propose a way of determining the electrode stability from BES measurements.