Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
复制标题
使用带隙选择性光电化学蚀刻去除光学器件的厚 (>100nm) InGaN 层
DOI：
10.1063/1.1776615
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发表时间：
2004
影响因子：
4
通讯作者：
E. Hu
中科院分区：
文献类型：
--
作者：
E. Haberer;Rajat Sharma;A. Stonas;S. Nakamura;S. Denbaars;E. Hu
我们报告的带隙选择性光电化学（PEC）蚀刻厚InGaN层用于光学器件，如GaN微盘，分布式布拉格反射器，和二维光子晶体膜。研究了三种InGaN牺牲层结构：300nm InGaN层、InGaN scinGaN超晶格和InGaN scinInGaN超晶格。计算的平衡能带图的外延结构被用来解释所观察到的蚀刻行为。InGaN牺牲层内的强压电诱导场被发现极大地影响载流子限制和蚀刻行为。作为蚀刻技术的演示，在InGaN柱上制作了独立的GaN微盘。
We report on band-gap-selective photoelectrochemical (PEC) etching of thick InGaN layers for use in optical devices, such as GaN microdisks, distributed Bragg reflectors, and two-dimensional photonic crystal membranes. Three InGaN sacrificial layer structures are studied: a 300nm InGaN layer, an InGaN∕GaN superlattice, and an InGaN∕InGaN superlattice. Calculated equilibrium band diagrams of the epitaxial structures are used to explain the observed etching behavior. The strong piezoelectric-induced fields within the InGaN sacrificial layers are found to greatly affect carrier confinement and etching behavior. As a demonstration of the etching technique, a free-standing GaN microdisk on an InGaN post is fabricated.