Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters
Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters
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DOI：
10.1021/nl400597d
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发表时间：
2013-07-01
期刊：
影响因子：
10.8
通讯作者：
Wang, T.
中科院分区：
文献类型：
--
作者：
Smith, R.;Liu, B.;Wang, T.
发展了一种新型的无机/有机混合半导体纳米结构，实现了蓝色发光InGaN/GaN多量子阱(MQW)和黄色发光聚合物之间非常有效的非辐射共振能量转移(RET)。InGaN/GaN纳米棒阵列的使用既允许更高的InGaN蓝发射的光学性能，又允许InGaN/GaN多量子阱与作为颜色转换介质的发射聚合物之间的最小分离。由于从氮化物发射极到黄色聚合物的非辐射RET，在杂化结构的InGaN/GaN多量子阱中观察到激子的衰减寿命显著缩短。详细的计算表明，非辐射RET的效率高达73%。该混合结构具有极快的非辐射RET，其衰减率为0.76 ns(-1)，约为InGaN/GaN多量子阱非辐射衰减率0.26 ns(-1)的三倍。这意味着RET在氮化物量子阱结构中的非辐射过程中占据主导地位，这将进一步提高器件的整体性能。
A novel hybrid inorganic/organic semiconductor nanostructure has been developed, leading to very efficient nonradiative resonant-energy-transfer (RET) between blue emitting InGaN/GaN multiple quantum wells (MQWs) and a yellow light emitting polymer. The utilization of InGaN/GaN nanorod arrays allows for both higher optical performance of InGaN blue emission and a minimized separation between the InGaN/GaN MQWs and the emitting polymer as a color conversion medium. A significant reduction in decay lifetime of the excitons in the InGaN/GaN MQWs of the hybrid structure has been observed as a result of the nonradiative RET from the nitride emitter to the yellow polymer. A detailed calculation has demonstrated that the efficiency of the nonradiative RET is as high as 73%. The hybrid structure exhibits an extremely fast nonradiative RET with a rate of 0.76 ns(-1), approximately three times higher than the InGaN/GaN MQW nonradiative decay rate of 0.26 ns(-1). It means that the RET dominates the nonradiative processes in the nitride quantum well structure, which can further enhance the overall device performance.