Study of the effect of manganese impurities on dielectric characteristics of BSTO films
Study of the effect of manganese impurities on dielectric characteristics of BSTO films
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锰杂质对BSTO薄膜介电特性影响的研究
DOI：
10.1134/1.1365480
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发表时间：
2001
影响因子：
0.7
通讯作者：
J. Hagberg
中科院分区：
文献类型：
--
作者：
S. Karmanenko;A. Dedyk;N. N. Isakov;A. S. Gordeichuk;A. Semenov;L. T. Ter;J. Hagberg
将含有二氧化锰杂质 (∼1.5–2 mol%) 的 BSTO 铁电薄膜的电容电压和电流电压特性与不含杂质的样品进行比较。结果表明，在 Mn 掺杂样品中，tanδ 下降至 10−3，并且 tanδ 对所施加电压的依赖性也发生变化。这些样品的 IVC 是严格欧姆性的，在高电压下不表现出非线性。提出了 Mn 对 BSTO 薄膜中包含氧空位的缺陷的电荷状态的影响的机制。
Capacitance voltage and current voltage characteristics of BSTO ferroelectric films containing a manganese dioxide impurity (∼1.5–2 mol%) are compared to those of impurity-free samples. It is shown that in Mn-doped samples tan δ drops to 10−3, and the dependence of tan δ on the applied voltage changes as well. IVCs of these samples are strictly ohmic and do not show a nonlinearity at high voltages. A mechanism is proposed of the effect of Mn on the charge state of the defects comprising oxygen vacancies in BSTO films.