Electron-Doping Effect on the Magnetic-Field-Sensitive Dielectric Anomaly in CaMn1?<italic>x</italic>Sb<italic>x</italic>O3
Electron-Doping Effect on the Magnetic-Field-Sensitive Dielectric Anomaly in CaMn1?<italic>x</italic>Sb<italic>x</italic>O3
复制标题
电子掺杂对 CaMn1?<斜体>x</斜体>Sb<斜体>x</斜体>O3 中磁场敏感介电异常的影响
DOI：
10.1109/tmag.2018.2868511
复制
发表时间：
2019
影响因子：
2.1
通讯作者：
Suryanarayanan Ramanathan
中科院分区：
文献类型：
--
作者：
Taniguchi Haruka;Takahashi Hidenori;Terui Akihiro;Kobayashi Satoru;Matsukawa Michiaki;Suryanarayanan Ramanathan
我们测量了电子掺杂锰氧化物CaMn_（1-x）Sb_xO_3（，0.12，0.13，0.15和0.2）的介电常数随温度的变化关系。在较低的温度下，所有样品的真实的部分都呈现出宽峰，虚部呈现出肩状结构，表明团簇的逐渐生长具有偶极有序性。我们新发现，这些介电异常的温度提高了90 K以上的Sb替代从。结果表明，载流子浓度是影响CaMn_（1-x）Sb_xO_3晶体电偶极有序性的决定性参数。此外，在所有样品中观察到磁电容效应。
We measured the temperature dependence of the dielectric constant of the electron-doped manganite CaMn1–xSbxO3(, 0.12, 0.13, 0.15, and 0.2). The real part exhibits a broad peak and the imaginary part exhibits a shoulder structure at a lower temperature in all the samples, suggesting a gradual growth of clusters which has a dipole ordering. We newly revealed that the temperatures of these dielectric anomalies are enhanced by more than 90 K by the Sb substitution fromto. The result indicates that the carrier concentration should be a decisive parameter for the dipole ordering in CaMn1–xSbxO3. Moreover, a magnetocapacitive effect is observed in all the samples.