Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
Temperature dependence of double Shockley stacking fault behavior in nitrogen-doped 4H-SiC studied by in-situ synchrotron X-ray topography
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DOI：
10.1016/j.actamat.2020.04.019
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发表时间：
2020-08-01
期刊：
影响因子：
9.4
通讯作者：
Ujihara, Toru
中科院分区：
文献类型：
--
作者：
Fujie, Fumihiro;Harada, Shunta;Ujihara, Toru
在1380-1910 K的广泛温度范围内，通过原位同步x射线形貌观察了氮浓度为1.0 × 10(19)-2.6 × 10(19) cm（-3）的4H-SiC晶体的双肖克利层错（DSFs）行为。当氮浓度为2.6 × 10(19) cm（-3）时，DSFs的膨胀速度在1370 ~ 1650 K范围内随温度呈指数增长。而当氮浓度为1.0 × 10(19) cm（-3）时，该速率在1610 K以上减小，dsf在1730 K以上减小。DSF能量的大小是部分位错（PD）运动的驱动力，由螺纹位错（TSDs）钉住的部分位错（PD）的弯曲曲率半径定量估计，显示出正的温度依赖性，在1630-1910 K下，氮浓度为1.0 × 10(19) cm（-3）时，DSF能量在-0.6至0.8 mJ/m(2)之间。DSF的膨胀和收缩行为可以通过DSF能量对温度和氮浓度的简单依赖来理解。(C) 2020材料学报Elsevier Ltd.出版。版权所有。
We observed the behavior of double Shockley stacking faults (DSFs) in 4H-SiC crystals with nitrogen concentrations of 1.0 x 10(19)-2.6 x 10(19) cm(-3 )over an extensive temperature range (1380-1910 K) by in-situ synchrotron X-ray topography. For a nitrogen concentration of 2.6 x 10(19) cm(-3), the expansion velocity of the DSFs exponentially increased with temperature in the range from 1370 to 1650 K. In contrast, at a nitrogen concentration of 1.0 x 10(19) cm(-3), this velocity decreased above 1610 K and the DSFs shrank above 1730 K. The DSF energy, the magnitude of which is the driving force on partial dislocation (PD) movement, was quantitatively estimated from the radius of the curvature of bowed-out partial PDs pinned by threading screw dislocations (TSDs), showing a positive temperature dependence and lying in the range from -0.6 to 0.8 mJ/m(2) for 1630-1910 K at a nitrogen concentration of 1.0 x 10(19) cm(-3). The DSF expansion and shrinkage behavior can be understood by the simple temperature and nitrogen concentration dependence of the DSF energy. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.