Control of Nano-Step Structures on Sapphire Wafer Surface by Focused Ion Beam Processing
Control of Nano-Step Structures on Sapphire Wafer Surface by Focused Ion Beam Processing
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DOI：
10.2109/jcersj.113.478
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发表时间：
2005
影响因子：
1.1
通讯作者：
Atsuko Takeuchi;T. Kotaki;K. Koyama;K. Sunakawa;Y. Yaguchi;Yoshinori Matsui;M. Murasugi;S. Seki;S. Tagawa;W. Hara;M. Yoshimoto
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文献类型：
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作者：
Atsuko Takeuchi;T. Kotaki;K. Koyama;K. Sunakawa;Y. Yaguchi;Yoshinori Matsui;M. Murasugi;S. Seki;S. Tagawa;W. Hara;M. Yoshimoto
利用聚焦离子束（FIB）系统在蓝宝石晶片上制备了直径约为200 nm、间距约为750 nm的纳米点阵列，这些纳米点阵列平行于原子台阶边缘。退火后，由于台阶被钉在纳米点上，因此形成了规则间隔且笔直的成束多台阶结构。在偏角为0.15°时，台阶高度和平台宽度分别约为2.0nm和700 nm;在偏角为1.0°时，台阶高度和平台宽度分别约为10.0nm和350 nm。
Nano-dots array whose diameter and interval were approximately 200 nm and 750 nm, respectively, were made parallel to the atomic step edges on sapphire wafers by focused ion beam (FIB) system. Upon annealing a bunched multi-steps structure formed at regularintervals and straight because the steps were pinned at the nano-dots. The step heights andterrace widths were approximately 2.0 nm, 700 nm in off-angle 0.15° and 10.0 nm, 350 nm in off-angle 1.0°, respectively.