GaN MOSFET with a gate SiO2insulator deposited by silane-basedplasma-enhanced chemical vapor deposition
GaN MOSFET with a gate SiO2insulator deposited by silane-basedplasma-enhanced chemical vapor deposition
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具有通过硅烷基等离子体增强化学气相沉积沉积的栅极 SiO2 绝缘体的 GaN MOSFET
DOI：
10.1002/pssc.201000489
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
and Yasuo Ohno
中科院分区：
文献类型：
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作者：
Jin-Ping Ao;Katsutoshi Nakatani;Yuji Sogawa;Shiro Akamatsu;Young Hyun Kim;Takahiro Miyashita;Shin-ichi Motoyama;and Yasuo Ohno
GaN金属氧化物半导体场效应晶体管（mosfet）采用等离子体增强化学气相沉积（PECVD）沉积的硅烷基sio2绝缘体，采用AlGaN/GaN异质结构场效应晶体管（HFET）结构作为源极和漏极。在可忽略的栅漏电流下实现高达15 V的栅电压。为了研究退火对器件性能的影响，将样品在850°C或1000°C的氧气或氮气环境中热处理10分钟。我们发现，在氮环境下，在1000℃下进行热处理，电子迁移率和界面态密度都得到了提高。当界面态密度为2.21×1011cm‐2eV‐1时，最大场效应迁移率约为137 cm2V‐1s‐1。（©2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
GaN metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) with a silane‐based SiO2insulator deposited by plasma‐enhanced chemical vapor deposition (PECVD) were demonstrated using an AlGaN/GaN heterostructure field‐effect transistor (HFET) structure as the source and drain regions. Operation up to a gate voltage of 15 V was realized at an ignorable gate leakage current. To investigate the effects of annealing on the device performance, the samples were thermally treated at 850 or 1000 °C for 10 minutes in oxygen or nitrogen ambient. We found that the electron mobility and the interface state density were improved by a thermal treatment at 1000 °C in nitrogen ambient. A maximum field‐effect mobility of approximately 137 cm2V‐1s‐1at an interface state density of 2.21×1011cm‐2eV‐1was obtained. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)