Ohmic contacts to n-type germanium with low specific contact resistivity
Ohmic contacts to n-type germanium with low specific contact resistivity
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DOI：
10.1063/1.3676667
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发表时间：
2012-01-09
影响因子：
4
通讯作者：
Leadley, D. R.
中科院分区：
文献类型：
--
作者：
Gallacher, K.;Velha, P.;Leadley, D. R.
已经开发了一种低温镍工艺，该工艺产生与n型锗的欧姆接触，在340摄氏度的退火温度下，比接触电阻率低至（2.361.8）× 10（-7）Ω-cm（2）。低接触电阻率归因于低电阻率NiGe相，其使用透射电子显微镜中的电子衍射来鉴定。电学结果表明，线性欧姆接触的行为是由于量子力学隧道通过肖特基势垒之间形成的NiGe合金和重掺杂的n-Ge。(C)2012年美国物理学会。[doi 10.1063/1.3676667]
A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.361.8) x 10(-7) Omega-cm(2) for anneal temperatures of 340 degrees C. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676667]