Characterization of half-metallic L21-phase Co2FeSi full-Heusler alloy thin films formed by rapid thermal annealing
Characterization of half-metallic L21-phase Co2FeSi full-Heusler alloy thin films formed by rapid thermal annealing
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DOI：
10.1063/1.2838648
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发表时间：
2007-11
影响因子：
3.2
通讯作者：
Y. Takamura;R. Nakane;H. Munekata;S. Sugahara
中科院分区：
文献类型：
--
作者：
Y. Takamura;R. Nakane;H. Munekata;S. Sugahara
作者开发了一种采用快速热退火 (RTA) 在绝缘体硅 (SOI) 衬底上制备具有 L21 有序结构的 Co2FeSi 全赫斯勒合金薄膜的技术。通过RTA诱导超薄SOI（001）层和沉积在其上的Fe∕Co层之间的硅化反应，成功形成了Co2FeSi全Heusler合金薄膜。在700℃的RTA温度下获得了高度(110)取向的L21相多晶全Heusler合金薄膜。 RTA 形成的全霍斯勒合金薄膜的晶体学和磁性能与块体全霍斯勒合金的性质相同。该技术与先进互补金属氧化物半导体技术中的金属源极/漏极形成工艺兼容，适用于金属氧化物半导体场效应晶体管类型自旋晶体管的半金属源极/漏极的制造。
The authors developed a preparation technique of Co2FeSi full-Heusler alloy thin films with the L21-ordered structure on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The Co2FeSi full-Heusler alloy films were successfully formed by RTA-induced silicidation reaction between an ultrathin SOI (001) layer and Fe∕Co layers deposited on it. The highly (110)-oriented L21-phase polycrystalline full-Heusler alloy films were obtained at the RTA temperature of 700°C. Crystallographic and magnetic properties of the RTA-formed full-Heusler alloy films were qualitatively the same as those of bulk full-Heusler alloy. The proposed technique is compatible with metal source∕drain formation process in advanced complementary metal-oxide semiconductor technology and would be applicable to the fabrication of the half-metallic source∕drain of metal-oxide-semiconductor field-effect transistor type of spin transistors.