Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode
Atomically Controlled Formation of Strained Si_<1-x>Ge_x/Si Quantum Heterostructure for Room- Temperature Resonant Tunneling Diode
复制标题
室温谐振隧道二极管应变Si_<1-x>Ge_x/Si量子异质结构的原子控制形成
DOI：
10.1149/1.3633314
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
M.Sakuraba and J.Murota
中科院分区：
文献类型：
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作者：
C. Mitsumata;S. Tomita;M. Mizuguchi;and T. Seki;M.Sakuraba and J.Murota
为了IV族半导体的量子异质集成，利用电子回旋共振（ECR）等离子体增强化学气相沉积（CVD）在低温下进行原子控制等离子体处理，实现了纳米级厚度控制的原子层掺杂和异质结构的形成，以及光滑和突然的界面。本文综述了近年来等离子体加工的典型成果：(1)通过N和B原子层的形成和Si（100）上的Si外延生长，证明了重原子层掺杂。大多数合并的N或B原子可以被限制在约2nm厚的区域内。(2)在Si（100）上可以外延生长出具有原子级平面度的高应变和弛豫Ge薄膜。(3)利用在Si（100）上形成的84%松弛的Ge缓冲层，形成了纳米级厚度的高应变Si薄膜。具有原子控制界面的纳米级多层异质结构对于用硅基第四族半导体制造量子效应器件非常重要[1-4]，可以在硅集成电路上实现新功能的异质集成。等离子体增强化学气相沉积（CVD）有望通过降低生长温度来改善界面的陡度。本文演示了原子控制等离子体低温外延生长和IV族半导体纳米结构的掺杂，而无需衬底加热。
For the purpose of quantum heterointegration of group IV semiconductors, atomically controlled plasma processing by utilizing an electron-cyclotron-resonance (ECR) plasma enhanced chemical vapor deposition (CVD) at low temperature has been developed to achieve atomic-layer doping and heterostructure formation with nanometer-order thickness control as well as smooth and abrupt interfaces. In this paper, recent typical achievements in the plasma processing are reviewed:(1) By N and B atomic-layer formation and Si epitaxial growth on Si (100), heavy atomic-layer doping was demonstrated. Most of the incorporated N or B atoms can be confined in an about 2 nm-thick region.(2) highly-strained and relaxed Ge films on Si (100) with atomic-order flatness can be epitaxially grown.(3) Using a 84% relaxed Ge buffer layer formed on Si (100), formation of a highly strained Si film with nanometer-order thickness was achieved.Nanometer-order multilayer heterostructure with atomically controlled interfaces is important to create quantum effect devices with Si-based group IV semiconductors [1-4] for heterointegration of new function on Si LSI. Plasma enhanced chemical vapor deposition (CVD) is expected to be useful to improve interface abruptness by lowering growth temperature. In this paper, atomically controlled plasma processing of lowtemperature epitaxial growth and doping of group IV semiconductor nanostructures without substrate heating are demonstrated.