NEW RECONSTRUCTIONS ON SILICON (111) SURFACES
NEW RECONSTRUCTIONS ON SILICON (111) SURFACES
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DOI：
10.1103/physrevlett.57.1020
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发表时间：
1986-08-25
影响因子：
8.6
通讯作者：
SWARTZENTRUBER, BS
中科院分区：
文献类型：
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作者：
BECKER, RS;GOLOVCHENKO, JA;SWARTZENTRUBER, BS
我们报告了在清洁硅（111）表面上首次观察到一类新的重建。通过激光和热退火的组合制备表面，并用隧道显微镜研究了新结构。c−（4× 2）和（2× 2）区域在激光退火后直接填充表面的有序部分。随后的部分热退火导致表面包含（5× 5），（7× 7），（9× 9）和其他中间结构。讨论了这些观测结果对锗和硅重建之间联系的影响。
We report the first observation of a class of new reconstructions on clean silicon (111) surfaces. The surfaces are prepared by a combination of laser and thermal annealing and the new structures are studied with a tunneling microscope. c−(4× 2) and (2× 2) regions populate the ordered parts of the surface directly after laser annealing. Subsequent partial thermal anneals result in a surface containing (5× 5),(7× 7),(9× 9), and other intermediate structures. These observations' bearing on the connection between germanium and silicon reconstructions is discussed.