Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers
Surface and interface studies of GaN epitaxy on Si(111) via ZrB2 buffer layers
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DOI：
10.1103/physrevlett.95.266105
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发表时间：
2005-12
影响因子：
8.6
通讯作者：
Y. Yamada-Takamura;Z. T. Wang;Y. Fujikawa;T. Sakurai;Q. Xue;J. Tolle;Po-Liang Liu;A. Chizmeshya;J. Kouvetakis;I. Tsong
中科院分区：
文献类型：
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作者：
Y. Yamada-Takamura;Z. T. Wang;Y. Fujikawa;T. Sakurai;Q. Xue;J. Tolle;Po-Liang Liu;A. Chizmeshya;J. Kouvetakis;I. Tsong
利用等离子体辅助分子束外延技术，通过晶格匹配的ZrB（2）缓冲层，在Si（111）衬底上外延生长了氮化镓薄膜，用非接触原子力显微镜（AFM）和反射式高能电子衍射（真实的）对外延生长的氮化镓薄膜进行了原位研究。生长的膜被确定为总是N-极性的。第一性原理理论计算模拟了GaN（0001）和ZrB（2）（0001）之间的界面结构，澄清了N极性的起源。
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB(2)(0001) clarify the origin of the N polarity.