Dual Interfacial Modification Engineering for Highly Efficient and Stable Perovskite Solar Cells
Dual Interfacial Modification Engineering for Highly Efficient and Stable Perovskite Solar Cells
复制标题
高效稳定钙钛矿太阳能电池的双界面改性工程
DOI:
10.1002/solr.202000652
复制
发表时间:
2020-12
期刊:
影响因子:
7.9
通讯作者:
Hongwei Song
中科院分区:
文献类型:
--
作者:
Le Liu;Dali Liu;Rui Sun;Donglei Zhou;Yanjie Wu;Xinmeng Zhuang;Shuainan Liu;Wenbo Bi;Nan Wang;Lu Zi;Boxue Zhang;Zhichong Shi;Hongwei Song
Although the research on perovskite solar cells (PSCs) has achieved rapid progress, its efficiency and stability still need to be further improved to meet the industrial requirements. The defects located inside the cells, on the surfaces, interfaces, or grain boundaries, will primarily affect carrier transportation through the formation of nonradiative recombination centers and hinder the further enhancement of the power conversion efficiency (PCE). Herein, a straightforward and simple defect passivation method is developed to increase the PCE and stability of PSCs. In the device, the N‐type semiconductor AgBiS2is introduced by thermal evaporation as a modified layer between the perovskite films and electron transport layer, which can improve the charge transport characteristic and bandgap optimization of PSCs. Simultaneously, dimethyl sulfoxide (DMSO) solvent mixed polyethylene glycol (PEG) is used for solvent annealing treatment, which can further improve the quality of perovskite film and reduce the trap density by increasing grain size and enhancing the crystallinity. As a result, the PSCs with dual‐interfacial modification exhibit a remarkable improvement in PCE from 18.58% to 21.19% with exceptional long‐term and moisture stability. This work provides an innovative insight for fabricating the stable and efficient PSCs toward the industrialization.