Breakdown analysis in JI, SOI and partial SOI power structures
Breakdown analysis in JI, SOI and partial SOI power structures
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DOI：
10.1109/soi.1997.634953
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发表时间：
1997-10
期刊：
影响因子：
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通讯作者：
F. Udrea;A. Popescu;W. Milne
中科院分区：
文献类型：
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作者：
F. Udrea;A. Popescu;W. Milne
仅给出摘要表格。 SOI 可能是功率器件和集成电路的未来技术。与传统的结隔离 (JI) 技术不同，SOI 具有简单有效的隔离、低漏电流、低压和高压组件之间的干扰减少以及非常高的速度等优点。然而，SOI 可能会遇到击穿电压低、自热和闩锁等问题。这些都是重要的方面，特别是对于需要高电流和高电压的高功率应用。基于SOI构建功率集成电路（PIC）的关键问题是高效的Resurf（降低表面场）效应以确保高击穿电压。这可以通过使用厚氧化物层和顶场氧化物来实现。然而，厚的氧化层可能会导致电路产生高温。同时最终击穿电压仍然低于优化的JI结构的击穿电压。通过数值模拟提出并演示了新的部分 SOI 器件结构。结果表明，部分SOI技术解决了传统SOI技术的主要问题之一——降低击穿电压，同时在开关速度和器件隔离方面几乎没有妥协。对 JI、SOI 和部分 SOI 的击穿行为进行了广泛的二维分析和分析建模。结果表明，部分 SOI 技术可以成为 PIC 传统 SOI 的重要替代品。
Summary form only given. SOI could be the future technology for power devices and integrated circuits. Unlike the conventional Junction Isolation (JI) technology, SOI benefits from simple and effective isolation, low leakage currents, reduced interference between low voltage and high voltage components and very high speed. SOI may, however, suffer from low breakdown voltage, self-heating and latch-up. These are essential aspects, especially for high power applications, where high currents and high voltages are required. The key issue in building a Power Integrated Circuit (PIC) based on SOI is an efficient Resurf (REduced SURface Field) effect to ensure a high breakdown voltage. This may be achieved by using a thick oxide layer and a top field oxide. However, thick oxide layers may cause high temperatures to be developed in the circuit. At the same time the final breakdown voltage is still below that of an optimised JI structure. New partial SOI device structures are proposed and demonstrated through numerical simulations. It is shown that the partial SOI technology solves one of the major problems of conventional SOI technology, the reduced breakdown voltage, with little compromise in the switching speed and device isolation. Extensive two-dimensional analyses and analytical modelling of the breakdown behaviour in JI, SOI and partial SOI have been carried out. The results indicate that partial SOI technology could be a serious alternative to conventional SOI for PICs.