Silicon based multijunction solar cells with wide-gap a-Si1−xCx:H top cell: Experimental and numerical approaches
Silicon based multijunction solar cells with wide-gap a-Si1−xCx:H top cell: Experimental and numerical approaches
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DOI：
10.1109/pvsc.2010.5615931
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
Ihsanul Afdi Yunaz;S. Miyajima;M. Konagai
中科院分区：
文献类型：
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作者：
Ihsanul Afdi Yunaz;S. Miyajima;M. Konagai
在本文中，我们报告了a-Si 1 −xCx：H/a-Si：H串联电池的制造，以证明制造的a-Si 1 −xCx：H单电池用作多结结构中的顶部电池的优点。到目前为止，Voc高达1.87 V（Jsc= 7.07 mA/cm 2，FF=0.67，η= 8.82%）。此外，通过数值分析估计了以制造的a-Si 1 −xCx：H作为顶部电池的三结电池的性能。据观察，使用最先进的a-Si 1 −xCx：H顶电池（i-顶厚度为150 nm），可以预期效率为14.2%的三重电池，这与其他小组的结果相当。研究还发现，通过增加顶电池的厚度，可以提高估计的效率。从这些结果中，我们可以得出这样的结论，所制备的a-Si 1 −xCx：H单电池是有益的，被用作多结结构中的顶电池。
In this paper, we report on fabrication of a-Si1−xCx:H/a-Si:H tandem cells to demonstrate the benefit of fabricated a-Si1−xCx:H single cells to be used as the top cell in multijunction structure. Up to now, Voc as high as 1.87 V (Jsc= 7.07 mA/cm2, FF=0.67, η= 8.82%) has been achieved. Furthermore, the performance of triple junction cells with fabricated a-Si1−xCx:H as the top cell was estimated through a numerical analysis. It was observed that with the state-of-art a-Si1−xCx:H top cell (i-top thickness of 150 nm), a triple cell with an efficiency of 14.2% could be expected, which was comparable to other groups' results. It was also found that the estimated efficiency could be improved by increasing the thickness of top cell. From these results, we can conclude that the fabricated a-Si1−xCx:H single cell is beneficial to be used as the top cell in the multijunction structure.