GaN grown on nano-patterned sapphire substrates*
GaN grown on nano-patterned sapphire substrates*
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DOI：
10.1088/1674-4926/36/4/043003
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发表时间：
2015-01
影响因子：
5.1
通讯作者：
Kong Jing;M. Feng;Cai Jin;Hui Wang;Huai-bing Wang;Hui Yang
中科院分区：
文献类型：
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作者：
Kong Jing;M. Feng;Cai Jin;Hui Wang;Huai-bing Wang;Hui Yang
在纳米图案化蓝宝石衬底（NPSS）上生长了高质量的氮化镓（GaN）薄膜，并利用XRD和SEM进行了研究。结果表明，NPSS衬底上GaN缓冲层的最佳厚度为15 nm，比微图案化蓝宝石衬底（MPSS）上的GaN缓冲层的最佳厚度要薄。在NPSS上生长的GaN薄膜中观察到一个有趣的现象：在生长初期，GaN主要生长在沟槽区，而很少生长在图案的侧壁上，这与在MPSS上生长的GaN有很大的不同。此外，对生长在NPSS上的LED的电学和光学特性进行了表征。
High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized.