Reduction and uniformization of the resistivity of Ga-doped ZnO by combining short-gap magnetron sputtering and buffer layer
Reduction and uniformization of the resistivity of Ga-doped ZnO by combining short-gap magnetron sputtering and buffer layer
复制标题
短间隙磁控溅射与缓冲层相结合降低Ga掺杂ZnO电阻率并均匀化
DOI：
10.7567/1347-4065/ab09c7
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
and Takahiko Yamashita
中科院分区：
文献类型：
--
作者：
Yoshinobu Matsuda;Naoki Matsuo;Kohei Sakamoto;Masanori Shinohara;Tomohiro Furusato;and Takahiko Yamashita
