Measurements of the Kapitza resistance and Onsager cross-coefficient for the4He crystal-superfluid interface
Measurements of the Kapitza resistance and Onsager cross-coefficient for the4He crystal-superfluid interface
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4He 晶体-超流体界面的 Kapitza 电阻和 Onsager 交叉系数的测量
DOI：
10.1007/bf00683225
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发表时间：
1983
期刊：
影响因子：
--
通讯作者：
S. Balibar
中科院分区：
文献类型：
--
作者：
P. Wolf;D. Edwards;S. Balibar
在低于1 K的温度下研究了4 He中粗糙晶体-超流界面热流的影响。用“超流熔化曲线温度计”同时测量了化学势差Δμ和温度差Δ T。结果给出了界面上的平均声子传输系数和一个无量纲量β，它决定了将Δμ与热流联系起来的Onsager系数。透射几率在低于0.2K时与T2成正比，与其他实验和各种理论一致，并且它稍微依赖于晶体取向，在轴附近增加。系数β大致与温度和方向无关，与Bowley和Edwards最近的理论一致。
The effect of a heat current across the atomically rough crystal-superfluid interface in4He has been studied below 1 K. The chemical potential difference Δμ and temperature difference ΔTwere measured simultaneously, the ΔTby means of a “superfluid melting-curve thermometer.” The results give the mean phonon transmission coefficient across the interfaceand a dimensionless quantity β that determines the Onsager coefficient linking Δμ with the heat current. The transmission probabilityis proportional toT2below 0.2 K, in agreement with other experiments and with various theories, and it depends slightly on the crystal orientation, increasing near thecaxis. The coefficient β, which is roughly independent of temperature and orientation, agrees with a recent theory of Bowley and Edwards.