Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering
Effects of morphology of buffer layers on ZnO/sapphire heteroepitaxial growth by RF magnetron sputtering
复制标题
DOI：
10.1557/opl.2015.87
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
T. Ide;K. Matsushima;R. Shimizu;D. Yamashita;H. Seo;K. Koga;M. Shiratani;N. Itagaki
中科院分区：
文献类型：
--
作者：
T. Ide;K. Matsushima;R. Shimizu;D. Yamashita;H. Seo;K. Koga;M. Shiratani;N. Itagaki
采用氮介导结晶法（NMC）研究了缓冲层表面形貌对ZnO/蓝宝石异质外延生长的影响。我们发现，NMC-ZnO缓冲层的高度分布轮廓和ZnO薄膜的晶体质量之间有很强的相关性。在具有尖峰高度分布的缓冲层上，生长具有原子级平坦表面的单晶ZnO薄膜。我们的研究结果表明，在初始生长阶段的均匀和高密度的成核是关键的ZnO异质外延在晶格失配的衬底。
Effects of surface morphology of buffer layers on ZnO/sapphire heteroepitaxial growth have been investigated by means of “nitrogen mediated crystallization (NMC) method”, where the crystal nucleation and growth are controlled by absorbed nitrogen atoms. We found a strong correlation between the height distribution profile of NMC-ZnO buffer layers and the crystal quality of ZnO films. On the buffer layer with a sharp peak in height distribution, a single-crystalline ZnO film with atomically-flat surface was grown. Our results indicate that homogeneous and high-density nucleation at the initial growth stages is critical in heteroepitaxy of ZnO on lattice mismatched substrates.