A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor.
A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor.
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DOI：
10.3390/ma7096843
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发表时间：
2014-09-22
期刊：
影响因子：
--
通讯作者：
Tokito S
中科院分区：
文献类型：
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作者：
Minamiki T;Minami T;Kurita R;Niwa O;Wakida SI;Fukuda K;Kumaki D;Tokito S
开发了一种基于扩展栅极型有机场效应晶体管 (OFET) 的新型免疫球蛋白 G (IgG) 检测生物传感器，其扩展栅极电极上具有抗 IgG 抗体，可在 3 V 以下工作。在牛血清白蛋白干扰物存在的情况下，目标 IgG 的滴定结果清楚地表明，随着 IgG 的增加，OFET 传输曲线出现负移 专注。推测这是由于目标 IgG 和固定在扩展栅极电极上的抗 IgG 抗体之间的相互作用。结果，实现了 0 至 10 µg/mL 的线性范围，检测限相对较低，为 0.62 µg/mL (= 4 nM)。我们相信这些结果为将扩展栅极型 OFET 应用于免疫传感开辟了机会。
A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing.