Color center creation in SiO2 under irradiation with swift heavy ions: Dependence on energy loss and fluence ☆
Color center creation in SiO2 under irradiation with swift heavy ions: Dependence on energy loss and fluence ☆
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DOI：
10.1016/j.optmat.2012.12.013
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发表时间：
2013-03
影响因子：
3.9
通讯作者：
Yingshuang Song;Chonghong Zhang;Yi-tao Yang;J. Gou;Liqing Zhang;D. He
中科院分区：
文献类型：
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作者：
Yingshuang Song;Chonghong Zhang;Yi-tao Yang;J. Gou;Liqing Zhang;D. He
利用320 kV高压实验平台（兰州IMP）和兰州HIRFL-SFC（兰州重离子研究装置）装置，采用600 keV、2 MeV、4 MeV和95 MeV Ar离子辐照的SiO 2 单晶进行了红外光谱和荧光光谱研究。 600 keV、2 MeV、4 MeV和95 MeV Ar离子照射的二氧化硅的PL光谱峰分别位于445 nm（F 2 色心）、570 nm（F 4 色心）和650 nm（F 2+ 和F 3+ 色心）发射带等。采用统一热尖峰模型，基于弹性碰撞尖峰模型和非弹性热尖峰模型相结合 从互易法推导出的电子能量损失，可以充分描述实验数据，清楚地证明了核能量损失和电子能量损失过程之间的协同作用。
SiO 2 single crystals irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions using 320 kV high voltage Experimental platform (IMP, Lanzhou) and the HIRFL-SFC (Heavy Ion Research Facility in Lanzhou) facility in Lanzhou were investigated by Infrared spectra and fluorescence spectroscopes. PL spectra peaks of silicon dioxide irradiated with 600 keV, 2 MeV, 4 MeV and 95 MeV Ar ions were located at 445 nm (F 2 color center), 570 nm (F 4 color center) and 650 nm (F 2+ and F 3+ color centers) emission band etc. Using the unified thermal spike model, a combination of the elastic collision spike model and the inelastic thermal spike model based on electronic energy losses derived from the reciprocity approach, it is possible to fully describe the experimental data, which clearly demonstrate a synergy between the nuclear energy loss and the electronic energy loss processes.