Single-electron charging in phosphorous donors in silicon observed by low-temperature Kelvin probe force microscope

Single-electron charging in phosphorous donors in silicon observed by low-temperature Kelvin probe force microscope
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低温开尔文探针力显微镜观察硅中磷供体的单电子充电

DOI:
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发表时间:
2011
期刊:
Si-based single-dopant atom devices
影响因子:
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通讯作者:
and M. Tabe
and M. Tabe
中科院分区:
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文献类型:
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作者:
M. Anwar;Y. Kawai;D. Moraru;R. Nowak;R. Jablonski;T. Mizuno;and M. Tabe

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