ow voltage electrowetting-on-dielectric platform using multi-layer insulators an -
ow voltage electrowetting-on-dielectric platform using multi-layer insulators an -
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发表时间：
2010
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通讯作者：
Youbo Lin;R. Evans;E. Welch;Bang-Ning Hsu;A. Madison;R. Fair
中科院分区：
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作者：
Youbo Lin;R. Evans;E. Welch;Bang-Ning Hsu;A. Madison;R. Fair
介绍了低压，两级金属和多层绝缘子电气电网（EWD）平台。从140 NL闭合片上的芯片储层中分配300个PL液滴，仅通过EWD力仅需11.4 V，而驱动阈值电压为7.2 V，电极之间的1 Hz电压切换速率为1 Hz电压。 EWD设备由由135 nm溅射的坦塔尔五氧化物（TA2O5）和180 nm parylene c涂层的多层绝缘子制造。此外，最小致动阈值电压遵循先前发布的缩放模型
A low voltage, two-level-metal, and multi-layer insulator electrowetting-on-dielectric (EWD) platform is presented. Dispensing 300 pl droplets from 140 nl closed on-chip reservoirs was accomplished with as little as 11.4 V solely through EWD forces, and the actuation threshold voltage was 7.2 V with a 1 Hz voltage switching rate between electrodes. EWD devices were fabricated with a multilayer insulator consisting of 135 nm sputtered tantalum pentoxide (Ta2O5) and 180 nm parylene C coated with 70 nm of CYTOP. Furthermore, the minimum actuation threshold voltage followed a previously published scaling model for