Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator
Multi-Layer MoS2 FET with Small Hysteresis by Using Atomic Layer Deposition Al2O3 as Gate Insulator
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DOI：
10.1149/2.0111409ssl
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发表时间：
2014-01-01
影响因子：
--
通讯作者：
Kwon, Jang-Yeon
中科院分区：
文献类型：
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作者：
Cho, Ah-Jin;Yang, Suk;Kwon, Jang-Yeon
像石墨烯这样的二维材料有很大的潜力超过传统硅器件的迁移率极限。特别地，MoS 2 FET由于其相当大的带隙而同时具有高迁移率和低截止电流。然而，其传递曲线中的大滞后是实现逻辑电路和开关器件的障碍。在这里，我们报告的多层MoS 2 FET使用原子层沉积Al 2 O3作为栅极绝缘体，表现出0.86 V的小滞后。据认为，这种改善的滞后属性的小陷阱在MoS 2/Al 2 O3界面，并确认通过恒流应力测试。(C)2014年电化学学会。All rights reserved.
Two-dimensional materials like graphene have great potential to excess the mobility limit of conventional silicon devices. Particularly, MoS2 FETs have high mobility and low off-current simultaneously due to their sizable band-gap. However, large hysteresis in its transfer curve is an obstacle for implementation to logic circuits and switching devices. Here, we report on a multi-layer MoS2 FET using atomic layer deposition Al2O3 as a gate insulator, showing small hysteresis of 0.86 V. It is thought that, such improvement in the hysteresis attributes to the small trap at the MoS2/Al2O3 interface, and it is confirmed through a constant current stress test. (C) 2014 The Electrochemical Society. All rights reserved.