An Efficient High Order Method for Dislocation Climb in Two Dimensions
An Efficient High Order Method for Dislocation Climb in Two Dimensions
复制标题
二维位错爬升的高效高阶方法
DOI:
10.1137/16m1081920
复制
发表时间:
2017
期刊:
影响因子:
--
通讯作者:
Y. Xiang
中科院分区:
文献类型:
--
作者:
Shidong Jiang;M. Rachh;Y. Xiang
We present an efficient high order method for dislocation dynamics simulation of vacancy-assisted dislocation climb in two dimensions. The method is based on a second kind integral equation (SKIE) formulation that represents the vacancy concentration via the sum of double layer potentials and point sources located at each dislocation, where the climb velocity of each dislocation (or the strength of each point source) is proportional to the integral of the unknown density on the boundary of each dislocation. The method discretizes the interfaces only. Unlike previously used formulations, the proposed method avoids the need for introducing additional unknowns or integrating kernels with logarithmic singularity, and the boundary integrals in the formulation are easily discretized via the trapezoidal rule with spectral accuracy. Thus, the number of unknowns in the linear system to achieve certain accuracy is optimal for typical settings in dislocation dynamics. We compare three different methods for solving r...