Magnetic properties of amorphous Ge–Cr thin films fabricated by thermal evaporation
Magnetic properties of amorphous Ge–Cr thin films fabricated by thermal evaporation
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热蒸发法制备非晶Ge-Cr薄膜的磁性能
DOI：
10.1002/pssb.200304514
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
S. Lim
中科院分区：
文献类型：
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作者：
W. B. Paek;James Kim;S. Lim
在非晶Ge 100 −xCrx（x以at.%表示）中观察到室温下的铁磁有序通过热共蒸发在高达x = 39的宽组成范围内制造的薄膜。高分辨率透射电子显微镜的结果表明，显微组织主要是非晶的，除了在x = 15（接近共晶组合物）和39，其中Ge和金属间化合物Ge 19 Cr 11的结晶沉淀物分别形成在非晶基体中。在室温下的饱和磁化强度表现出最大值为2.5 emu/cc在x = 29和饱和磁化强度的组成依赖性的微结构的结果是支持。（© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Ferromagnetic ordering at room temperature is observed in amorphous Ge100−xCrx (x in at.%) thin films fabricated by thermal co‐evaporation over a wide composition range up to x = 39. High resolution transmission electron microscopy results indicate that the microstructure is mostly amorphous, except for at x = 15 (close to eutectic composition) and 39 where crystalline precipitates of Ge and the intermetallic Ge19Cr11 compound are respectively formed in an amorphous matrix. The saturation magnetization at room temperature exhibits a maximum value of 2.5 emu/cc at x = 29 and the compositional dependence of saturation magnetization is supported by the microstructural results. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)