Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
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用于超高速、低功耗逻辑应用的硅上异质 InSb 量子阱晶体管
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
R. Chau
中科院分区：
文献类型：
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作者：
T. Ashley;L. Buckle;S. Datta;M. Emeny;D. Hayes;K. Hilton;R. Jefferies;T. Martin;T. Phillips;D. Wallis;P. Wilding;R. Chau
首次研究了 InSb 量子阱晶体管在硅衬底上的异质集成。 85 nm 栅极长度 FET（在 V ds = 0.5 V 时 f T = 305 GHz）和适用于数字逻辑的 DC 性能在缓冲器厚度仅为 1.8 μm 的材料上得到了演示。将 InSb FET 与主流 Si CMOS 集成以实现高速节能逻辑应用的第一步已经实现。
The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with f T = 305 GHz at V ds = 0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 mum thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed energy-efficient logic applications has been achieved.