The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer
The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer
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DOI：
10.1002/pssb.200405059
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发表时间：
2004-10
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影响因子：
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通讯作者：
Y. Cho;Jea-Chul Kim;Young Ju Park;H. Na;H. Kim;Hyun Jin Kim;E. Yoon;Young Woon Kim
中科院分区：
文献类型：
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作者：
Y. Cho;Jea-Chul Kim;Young Ju Park;H. Na;H. Kim;Hyun Jin Kim;E. Yoon;Young Woon Kim
研究了采用金属有机物化学气相沉积（MOCVD）方法在应变蓝宝石（0001）衬底上生长的GaN外延层的结构特性。为了使蓝宝石衬底和GaN外延层之间的晶格常数和热膨胀系数的失配最小化，我们使用高能O+、Cl+和As+离子注入将应变施加到蓝宝石（0001）衬底上。应变蓝宝石表面导致GaN外延层中不同的缺陷产生行为。不仅离子种类，而且蓝宝石上的低温GaN缓冲层的厚度也影响GaN外延层的结构质量。目前的结果表明，O+离子注入衬底可以提供一个改进的GaN外延层，只使用一个薄的（约5nm）的缓冲层，而不是使用一个较厚的。（© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We investigated the structural properties of GaN epilayers grown on strained sapphire (0001) substrate by metal‐organic chemical vapor deposition (MOCVD). To minimize the mismatch in lattice constants and thermal expansion coefficients between the sapphire substrate and the GaN epilayer, we imposed the strain onto the sapphire (0001) substrate using high‐energy O+, Cl+, and As+ ion implantation. The strained sapphire surfaces result in the different behaviors of defect generation in the GaN epilayer. Not only the ionic species but also the thickness of the low‐temperature GaN buffer layer on sapphire affected the structural quality of the GaN epilayer. The present results show that O+ ion‐implanted substrate can provide an improved GaN epilayer using only a thin (∼5 nm) buffer layer rather than using a thicker one. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)